Title :
A 0.5-V 250-nW 65-dB SNDR passive ΔΣ modulator for medical implant devices
Author :
Yeknami, Ali Fazli ; Alvandpour, Atila
Author_Institution :
Dept. of Electr. Eng., Linkoping Univ., Linköping, Sweden
Abstract :
A 0.5-V ultra-low-power second-order DT ΔΣ modulator is presented in this paper for medical implant devices. The modulator employs 2nd-order passive low-pass filter and ultra-low-voltage building blocks, including preamplifier, regenerative comparator, and clock controller, in order to enable operation near 0.5 V supply. A low-noise and gain-enhanced single-stage preamplifier is developed using a body-driven technique. Passive filter is gain boosted by power-efficient charge-redistribution amplification scheme. Designed in a 65nm CMOS technology, the modulator achieves 65 dB peak SNDR over a 500 Hz signal bandwidth, while it consumes 250 nW from a 0.5 V supply. The modulator is functional at 0.45V and obtains 52 dB SNR, while consuming 200 nW.
Keywords :
CMOS integrated circuits; clocks; comparators (circuits); delta-sigma modulation; integrated circuit design; integrated circuit noise; low-pass filters; low-power electronics; passive filters; preamplifiers; prosthetic power supplies; radiofrequency integrated circuits; 2nd-order passive low-pass filter; CMOS technology; SNDR; body-driven technique; clock controller; low-noise gain-enhanced single-stage preamplifier; medical implant device; noise figure 52 dB; noise figure 65 dB; power 200 nW; power 250 nW; power-efficient charge-redistribution amplification scheme; regenerative comparator; size 65 nm; ultralow-power second-order DT passive ΔΣ modulator; ultralow-voltage building block; voltage 0.45 V; voltage 0.5 V; Capacitors; Clocks; Gain; Modulation; Noise; Passive filters; Switches;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572265