Modeling and analysis of signal transmission with Through Silicon Via (TSV) noise coupling

In this paper, TSV noise coupling is investigated in terms of both noise transfer function and signal integrity. An electrical model of coupled TSVs is presented and verified by 3-D field solver. Additionally, influence on TSV noise coupling transfer function with different TSV height, pitch and the thickness of insulation layer is analyzed. The electrical model helps to simplify the analyzing process and accurately reflect the influence of TSV process on coupled noise, thus providing a foundation for analysis on the noise-affected TSV signal. Further investigations on signal integrity of a TSV cluster are presented based on the electrical model, including transmission delay and bit error rate. The quantitative results tell an extensive influence on the reliability of TSV transmission system with different input patterns. The maximum transfer delay differs 10.24 times and signal quality differs up to several decades´ times. The quantitative analysis in this paper can provide a theoretical foundation and insight of the anti-noise TSV design.