Title :
Modeling and analysis of signal transmission with Through Silicon Via (TSV) noise coupling
Author :
Zhenyang Chen ; Qin Wang ; Jing Xie ; Jin Tian ; Jianfei Jiang ; Yufei Li ; Wen Yin
Author_Institution :
Sch. of Microelectron., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
In this paper, TSV noise coupling is investigated in terms of both noise transfer function and signal integrity. An electrical model of coupled TSVs is presented and verified by 3-D field solver. Additionally, influence on TSV noise coupling transfer function with different TSV height, pitch and the thickness of insulation layer is analyzed. The electrical model helps to simplify the analyzing process and accurately reflect the influence of TSV process on coupled noise, thus providing a foundation for analysis on the noise-affected TSV signal. Further investigations on signal integrity of a TSV cluster are presented based on the electrical model, including transmission delay and bit error rate. The quantitative results tell an extensive influence on the reliability of TSV transmission system with different input patterns. The maximum transfer delay differs 10.24 times and signal quality differs up to several decades´ times. The quantitative analysis in this paper can provide a theoretical foundation and insight of the anti-noise TSV design.
Keywords :
error statistics; insulation; integrated circuit modelling; integrated circuit reliability; three-dimensional integrated circuits; transfer functions; 3D field solver; TSV noise coupling transfer function; TSV transmission system reliability; antinoise TSV design; bit error rate; coupled TSV; electrical model; insulation layer; noise transfer function; quantitative analysis; signal integrity; signal transmission; through silicon via noise coupling; transmission delay; Analytical models; Couplings; Delays; Mathematical model; Noise; Solid modeling; Through-silicon vias;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572422