Efficiency enhancement of InGaN based quantum well and quantum dot solar cell

Enhancing conversion efficiency is the main object in the photovoltaic technology of solar cells. III-V semiconductors, InGaN alloy are very encouraging candidates for solar cells. In recent years, InGaN alloy provides the ability to tune the band gap for solar energy conversion. In this work, InGaN based QW and QD solar cells have been theoretically studied and evaluated the performance with various parameters for achieving high efficiency. Short circuit current density, open circuit voltage and efficiency are calculated with the dependencies of band gap energy. The efficiency is found to be 46.38% for InGaN based QW solar cell. The calculations show that the inclusion of the QDs in the intrinsic region does indeed enhance short circuit current without significant losses in the open circuit voltage and result significantly improved cell efficiency. Comparison of InGaN based MQW and QD solar cell implies that InGaN based QD solar cell offers the highest efficiency.