Title :
The design and simulation of radio frequency narrow band low noise amplifier with input, output, intermediate matching
Author :
Pramod, K.B. ; Kumaraswamy, H.V. ; Praveen, K.B.
Author_Institution :
Dept. of Electron. Eng., Jain Univ. Bangalore, Bangalore, India
Abstract :
This paper presents the design and simulation of 2stage low noise amplifier(LNA) for the application of L-band used for mobile satellite communications by using microstrip technology and focusing on development of low noise amplifier operating from 0.6GHz-1.2GHz by using Enhancement Mode Pseudomorphic HEMT ATF34143 from Avago Technologies. The design circuit uses lumped elements to implement with input, output, intermediate matching networks and purpose 2stage is to achieve good gain. Input and output matching network is to produces 50Ω impedance for maximum power transfer. The target simulation are gain (S21) with 30 dB, noise figure (NF) with 1dB throughout the band from 0.6G -1.2GHz, Input Return loss -16dB and Output Return Loss -18dB. A 2stage LNA has successfully designed with 35 dB forward gain, 0.56 dB noise figure, Input Return loss -16dB to -27dB and Output Return Loss -19dB to -23dB by using Advance Wireless Revolution (AWR) Microwave office tool.
Keywords :
UHF amplifiers; low noise amplifiers; mobile satellite communication; radiofrequency amplifiers; 2stage low noise amplifier; L-band; LNA; advance wireless revolution microwave office tool; enhancement mode pseudomorphic HEMT ATF34143; frequency 0.6 GHz to 1.2 GHz; gain 30 dB; gain 35 dB; input matching network; intermediate matching networks; loss -16 dB to -27 dB; loss -18 dB; loss -19 dB to -23 dB; loss 16 dB; lumped elements; microstrip technology; mobile satellite communications; noise figure 0.56 dB; noise figure 1 dB; output matching network; radio frequency narrow band low noise amplifier; Circuit stability; Gain; Impedance matching; Layout; Noise; Stability analysis; Transistors; Advance Wireless Revolution; Low Noise Amplifier; Mobile Satellite Communications and Pseudomorphic High Electron Mobility Transistor; Noise Figure; Radio Frequency;
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2013 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-0397-9
DOI :
10.1109/ICIEV.2013.6572585