I-V characterization of graphene nanoribbon FET coupling Schrödinger-Poisson equation

Author

Saha, A.K. ; Saha, Gobinda ; Al Shohel, Mohammad Abdullah ; Rashid, A. B. M. Harun-Ur

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2013

fDate

17-18 May 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents details of a coupled Schrödinger-Poisson solver for modeling I-V characteristics of graphene nanoribbon field-effect transistors (GNR-FET). Poisson solution is obtained using a three-dimensional finite difference algorithm. The Schrödinger solution is implemented by the scattering matrix method which results in spatially unbounded wavefunctions, defined on the nanoribbon surface, are normalized to the flux computed by the Landauer formula. The resultant I-V characteristic of the device is then analyzed.

Keywords

Poisson equation; S-matrix theory; Schrodinger equation; field effect transistors; finite difference methods; graphene; nanoribbons; GNR-FET; I-V characterization; Landauer formula; coupled Schrödinger-Poisson solver; graphene nanoribbon field-effect transistors; nanoribbon surface; scattering matrix method; spatially unbounded wavefunctions; three-dimensional finite difference algorithm; Educational institutions; Electric potential; Equations; Graphene; Mathematical model; Scattering; Transmission line matrix methods; Graphene Nanoribbon; Landauer; Poisson; Scattering Matrix; Schrödinger; Self-consistent Solver;

fLanguage

English

Publisher

ieee

Conference_Titel

Informatics, Electronics & Vision (ICIEV), 2013 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4799-0397-9

Type

conf

DOI

10.1109/ICIEV.2013.6572682

Filename

6572682