DocumentCode
627884
Title
Complete Analytical Model for Different Variations of FinFET
Author
Mohseni, J. ; Meindl, J.D.
Author_Institution
Georgia Inst. Of Technol., Atlanta, GA, USA
fYear
2013
fDate
5-7 April 2013
Firstpage
63
Lastpage
63
Abstract
Here we present a complete analytical model that characterizes all the variations of multi-gate MOSFETs including the Tri-gate FinFET (Figure 1), all-around gate FinFET, Trapezoidal FinFET, Double-gate MOSFET, etc. Next we present a complete comparison between ideal rectangular FinFETs and trapezoidal FinFETs. Finally, for the first time, we present the ultimate limit for scaling of rectangular and trapezoidal FinFETs.
Keywords
MOSFET; biomedical electronics; integrated circuit modelling; FinFET variation; Tri-gate FinFET; all-around gate FinFET; complete analytical model; double-gate MOSFET; ideal rectangular FinFET; multigate MOSFET variation; trapezoidal FinFET; ultimate scaling limit; Analytical models; FinFETs; Logic gates; Measurement; Semiconductor device modeling; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Bioengineering Conference (NEBEC), 2013 39th Annual Northeast
Conference_Location
Syracuse, NY
ISSN
2160-7001
Print_ISBN
978-1-4673-4928-4
Type
conf
DOI
10.1109/NEBEC.2013.6
Filename
6574358
Link To Document