Title :
Development of Through Glass Via (TGV) formation technology using electrical discharging for 2.5/3D integrated packaging
Author :
Takahashi, Satoshi ; Horiuchi, Keisuke ; Tatsukoshi, Kentaro ; Ono, M. ; Imajo, Nobuhiko ; Mobely, Tim
Author_Institution :
Asahi Glass Co., Ltd., Tokyo, Japan
Abstract :
This study explored Through Glass Via (TGV) Formation Technology by using Focused Electrical Discharging Method for alkali-fee glass which has well matched CTE with Si. 2.5D/3D Packaging has presently attracted lots of attention, an interposer is recognized as one of key materials, and its development of new fine pitch, high dense, and low cost interposer are accelerated. Glass is expected as one of candidates as a substrate material of future interposer substrate. This study demonstrates TGV formation showed capabilities of fine pitch and high dense, and TGV formation for standard thick glass aiming varied applications for packaging such as MEMS, Optical device, and RF device. This study discussed further challenges related to metalization technique and carrying methods for glass interposer. Necessary future development and subjects were pointed out.
Keywords :
discharges (electric); elemental semiconductors; glass; integrated circuit metallisation; integrated circuit packaging; silicon; 2.5D integrated packaging; 3D integrated packaging; CTE; MEMS; RF device; Si; TGV formation; alkali-fee glass; carrying methods; fine pitch; focused electrical discharging method; glass interposer; interposer substrate; metalization technique; optical device; standard thick glass; substrate material; through glass via formation technology; Glass; Packaging; Shape; Silicon; Standards; Substrates;
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4799-0233-0
DOI :
10.1109/ECTC.2013.6575594