Impacts of static and dynamic local bending of thinned Si chip on MOSFET performance in 3-D stacked LSI

Author

Kino, Hitoshi ; Bea, J.-C. ; Murugesan, Mariappan ; Lee, Ki-Won ; Fukushima, Tetsuya ; Koyanagi, Mitsumasa ; Tanaka, T.

Author_Institution

Dept. of Bioeng. & Robot., Tohoku Univ., Sendai, Japan

fYear

2013

fDate

28-31 May 2013

Firstpage

360

Lastpage

365

Abstract

A three-dimensional (3-D) LSI has many lots of through-Si vias (TSVs) and metal microbumps to achieve electrical connections between stacked thinned LSI chips, and also has organic adhesives to obtain completely bonded thinned LSI chips. However, these elements, especially microbumps and organic adhesives, induce static and dynamic local bending of the thinned LSI chips. In this study, for the first time, we investigated impacts of the static and dynamic local bending on MOSFET characteristics using a novel test structure.

Keywords

MOSFET; adhesives; elemental semiconductors; large scale integration; silicon; three-dimensional integrated circuits; 3D stacked LSI; MOSFET characteristics; MOSFET performance; Si; TSV; completely bonded thinned LSI chips; dynamic local bending; electrical connections; metal microbumps; organic adhesives; stacked thinned LSI chips; static local bending; test structure; thinned chip; three-dimensional LSI; through-silicon vias; Large scale integration; MOSFET; Metals; Semiconductor device measurement; Silicon; Stress; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd

Conference_Location

Las Vegas, NV

ISSN

0569-5503

Print_ISBN

978-1-4799-0233-0

Type

conf

DOI

10.1109/ECTC.2013.6575596

Filename

6575596