Low-cost micrometer-scale silicon vias (SVs) fabrication by metal-assisted chemical etching (MaCE) and carbon nanotubes (CNTs) filling

Author

Liyi Li ; Yagang Yao ; Ziyin Lin ; Yan Liu ; Wong, C.P.

Author_Institution

Mater. Sci. & Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2013

fDate

28-31 May 2013

Firstpage

581

Lastpage

585

Abstract

A low cost etching method, metal-assisted chemical etching (MaCE), was used to successfully etching 30 μm-diameter silicon vias (SVs), of which the quality are comparable to those fabricated by deep reactive ion etching (DRIE) method. A novel carbon nanomaterial filling method was developed based on chemical vapor deposition (CVD) technique. The influence of preparation of CVD catalyst on the quality of filling materials was compared and discussed.

Keywords

carbon nanotubes; catalysts; chemical vapour deposition; etching; filling; metals; microfabrication; sputter etching; three-dimensional integrated circuits; CNT filling materials; CVD catalyst; CVD technique; DRIE method; MaCE; SV fabrication; TSV; carbon nanotubes filling method; chemical vapor deposition technique; deep reactive ion etching method; low-cost micrometer-scale silicon via fabrication; metal-assisted chemical etching; Aluminum oxide; Carbon nanotubes; Etching; Filling; Gold; Iron; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd

Conference_Location

Las Vegas, NV

ISSN

0569-5503

Print_ISBN

978-1-4799-0233-0

Type

conf

DOI

10.1109/ECTC.2013.6575632

Filename

6575632