DocumentCode
628516
Title
System level signal and power integrity analysis for 3200Mbps DDR4 interface
Author
Feng, Jianjiang ; Dhavale, Bipin ; Chandrasekhar, Janani ; Tretiakov, Yuri ; Oh, Dan
Author_Institution
Altera Corp., San Jose, CA, USA
fYear
2013
fDate
28-31 May 2013
Firstpage
1081
Lastpage
1086
Abstract
For single-ended signaling DDR4 channels at 3200Mbps, signal and power integrity issues become increasingly challenging with much smaller voltage and timing windows to balance the budget. As systems increase data rate and IO count, supply noise does not scale accordingly. We present a system level signal and power co-simulation analysis to optimize system performance under stringent timing requirement [1]. Signal integrity of DDR4 interface, such as inter-symbol interference ISI, reflection, and signal cross talk, needs to be minimized in order to meet an ever shrinking timing budget. Also, power delivery network (PDN) design becomes very difficult as a result of smaller die size and multilayer complex package design. SI and PI co-design optimization is driven by both channel performance and overall system cost.
Keywords
DRAM chips; electronics packaging; noise; optimisation; DDR4 channels; DDR4 interface; PDN design; bit rate 3200 Mbit/s; channel performance; codesign optimization; multilayer complex package design; power cosimulation analysis; power delivery network; power integrity analysis; supply noise; system level signal; Correlation; Crosstalk; Frequency measurement; Impedance; Noise; Silicon; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575708
Filename
6575708
Link To Document