Cu/Sn SLID wafer-level bonding optimization

Author

Thi-Thuy Luu ; Duan, Ani ; Kaiying Wang ; Aasmundtveit, Knut ; Hoivik, Nils

Author_Institution

Dept. of Micro & Nano Technol., Vestfold Univ. Coll., Borre, Norway

fYear

2013

fDate

28-31 May 2013

Firstpage

1531

Lastpage

1537

Abstract

The objective of this study is to optimize the Cu/Sn solid liquid bonding process, which is an attractive technique for wafer-level MEMS packaging and encapsulation. In order to optimize the bonding process, the effect of bonding temperature profile, initial Sn layer thickness and bond pressure are investigated and discussed. Bond performance is characterized by sealing yield, dicing yield and cross section analysis of the bond interface. With correct design of Cu/Sn layer thickness and temperature profile, high bond yield at bond temperature 270°C and 250°C was obtained.

Keywords

bonding processes; copper alloys; encapsulation; optimisation; seals (stoppers); tin alloys; wafer level packaging; Cu-Sn; Cu-Sn SLID; Sn layer thickness; bond interface; bonding temperature profile; cross section analysis; dicing yield; encapsulation; sealing yield; solid liquid bonding process; temperature 250 degC; temperature 270 degC; wafer-level MEMS packaging; wafer-level bonding optimization; Bonding; Etching; Force; Gold; Thickness measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd

Conference_Location

Las Vegas, NV

ISSN

0569-5503

Print_ISBN

978-1-4799-0233-0

Type

conf

DOI

10.1109/ECTC.2013.6575775

Filename

6575775