• DocumentCode
    628619
  • Title

    Bath chemistry and copper overburden as influencing factors of the TSV annealing

  • Author

    Saettler, P. ; Boettcher, M. ; Rudolph, Carsten ; Wolter, Klaus-Jurgen

  • Author_Institution
    Electron. Packaging Lab., Tech. Univ. Dresden, Dresden, Germany
  • fYear
    2013
  • fDate
    28-31 May 2013
  • Firstpage
    1753
  • Lastpage
    1758
  • Abstract
    The outlined investigations represent a new systematic approach for the characterization of the copper annealing behavior in TSVs. In the center of interest are the changes in material behavior caused by bath chemistry compositions and deposition parameters during the ECD copper fill. In addition the effects on annealing behavior with or without Cu overburden are evaluated. Therefore, two bath chemistries were used for the Cu fill of one TSV test die layout. Moreover, half of the die samples underwent overburden CMP. The resulting four test die groups underwent annealing at identical conditions. The subsequent characterization featured protrusion, warpage and EBSD measurements. Results show a direct link of crystallographic defect reductions towards the tendency of developing Cu protrusion. Also deviations in warpage and crystal structure development for annealing with or without Cu overburden are presented. In conclusion the outlined investigation gains information how the Cu crystal structure develops in TSVs during annealing and links this behavior to thermo-mechanical effects like protrusion and warpage. This paper demonstrates that this behavior is dependent on the applied bath chemistry and that the presence of an overburden layer also has an influence. Deductions for an improved TSV manufacturing process can be derived from the achieved results.
  • Keywords
    annealing; chemical mechanical polishing; copper; integrated circuit layout; integrated circuit testing; three-dimensional integrated circuits; CMP; Cu; EBSD measurements; ECD; TSV annealing; TSV test die layout; bath chemistry; copper overburden; crystallographic defect reductions; protrusion; thermo-mechanical effects; warpage; Annealing; Chemistry; Copper; Grain size; Stress; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0569-5503
  • Print_ISBN
    978-1-4799-0233-0
  • Type

    conf

  • DOI
    10.1109/ECTC.2013.6575812
  • Filename
    6575812