DocumentCode
628619
Title
Bath chemistry and copper overburden as influencing factors of the TSV annealing
Author
Saettler, P. ; Boettcher, M. ; Rudolph, Carsten ; Wolter, Klaus-Jurgen
Author_Institution
Electron. Packaging Lab., Tech. Univ. Dresden, Dresden, Germany
fYear
2013
fDate
28-31 May 2013
Firstpage
1753
Lastpage
1758
Abstract
The outlined investigations represent a new systematic approach for the characterization of the copper annealing behavior in TSVs. In the center of interest are the changes in material behavior caused by bath chemistry compositions and deposition parameters during the ECD copper fill. In addition the effects on annealing behavior with or without Cu overburden are evaluated. Therefore, two bath chemistries were used for the Cu fill of one TSV test die layout. Moreover, half of the die samples underwent overburden CMP. The resulting four test die groups underwent annealing at identical conditions. The subsequent characterization featured protrusion, warpage and EBSD measurements. Results show a direct link of crystallographic defect reductions towards the tendency of developing Cu protrusion. Also deviations in warpage and crystal structure development for annealing with or without Cu overburden are presented. In conclusion the outlined investigation gains information how the Cu crystal structure develops in TSVs during annealing and links this behavior to thermo-mechanical effects like protrusion and warpage. This paper demonstrates that this behavior is dependent on the applied bath chemistry and that the presence of an overburden layer also has an influence. Deductions for an improved TSV manufacturing process can be derived from the achieved results.
Keywords
annealing; chemical mechanical polishing; copper; integrated circuit layout; integrated circuit testing; three-dimensional integrated circuits; CMP; Cu; EBSD measurements; ECD; TSV annealing; TSV test die layout; bath chemistry; copper overburden; crystallographic defect reductions; protrusion; thermo-mechanical effects; warpage; Annealing; Chemistry; Copper; Grain size; Stress; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575812
Filename
6575812
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