Buffered distributed spray MOCVD reactor for LED production

In this paper we present design of a novel buffered distributed spray (BDS) MOCVD reactor, which is characterized by vertical distributed spray and horizontal radical flows. Theoretical studies have been performed about the reaction mechanisms of GaN films based on computational fluid dynamics (CFD) simulation to investigate the performance of the BDS reactor. Furthermore, we present the secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL) test results to evaluate the quality of the LED epitaxial layers and the performance of the MOCVD system with BDS reactor. The results show that this system is of high performance for LED production, especially in the uniformity of growth rate, sharp interfaces in the MQWs structure and growth repeatability.