Implementation of semiconducting nanowires for the design of THz detectors

Semiconducting n-type GaAs nanowires are utilized in the fabrication of Schottky diodes for the design of THz detectors (rectifiers). Multiple nanowires placed in parallel are integrated with a wide-band log-periodic antenna to achieve improved impedance matching over a wide frequency range. A novel low-cost process using photolithography is used in the fabrication of sub-micron devices. Fabrication of nano-wire devices is compatible with integration on a host of substrates at low processing temperature. Measured detector shows strong nonlinear rectification behavior. High rectification voltage, with NEP of approximately 10pW/Hz^0.5, is achieved in the RF frequency. NEP value of 44pW/Hz^0.5 is calculated from measured results at 0.5THz under impedance matched condition.