DocumentCode :
62873
Title :
Analysis of High- \\kappa Spacer Asymmetric Underlap DG-MOSFET for SOC Application
Author :
Koley, Kalyan ; Dutta, Arka ; Saha, Samar K. ; Sarkar, Chandan K.
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India
Volume :
62
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1733
Lastpage :
1738
Abstract :
In this paper, asymmetric underlap double-gate (AUDG) MOSFET is studied to analyze the influence of high-k spacer on the intrinsic device parameters. The AUDG-MOSFET architecture offers better device performance, particularly, drain-induced barrier lowering in contrast to the conventional double-gate (DG)-MOSFET. However, the ON current and the distributed resistances for the device increase considerably. The analysis of the device presented here shows that the detrimental effects of the device can be effectively eliminated using high-k spacers. To evaluate the device performance and to study the improvement associated with the use of high-k spacers, different intrinsic parameters are analyzed. These parameters include transconductance (gm), transconductance generation factor (gm/Id), intrinsic gain (gmro), intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax), gain bandwidth product, and inverter delay.
Keywords :
MOSFET; system-on-chip; SOC application; asymmetric underlap double-gate MOSFET; cutoff frequency; drain-induced barrier lowering; gain bandwidth product; high-κ spacer asymmetric underlap DG-MOSFET; inductance; intrinsic capacitance; intrinsic device parameters; intrinsic gain; inverter delay; maximum frequency of oscillation; resistance; transconductance generation factor; transport delay; Capacitance; High K dielectric materials; Logic gates; Performance evaluation; Radio frequency; Resistance; Asymmetric underlap double-gate (AUDG) FET; high- $k$; high-k; intrinsic parameter spacer; intrinsic parameter spacer.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2397699
Filename :
7039277
Link To Document :
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