Title :
Performance comparison of 4H-SiC mesfets
Author :
Prasad, D. Anil ; Komaragiri, Rama
Author_Institution :
Dept. of Electron. & Commun. Eng., NIT Calicut, Calicut, India
Abstract :
In this paper, effect of surface on breakdown voltage characteristics using 2-D Synopsys Sentaurus TCAD simulation were studied by comparing different surface structures of 4H-SiC MESFETs such as Non-recessed, channel-recessed, Non-recessed buried-gate and channel-recessed buried-gate structures. On current (ION) and off current (IoFF) characteristics of all structures are studied. Buried gate structure with channel recess showed highest breakdown voltage compared to all other structures but with low on current (ION). In addition, the effect of depth of buried region and length of gate on breakdown voltage characteristics is studied.
Keywords :
Schottky gate field effect transistors; electric breakdown; silicon compounds; technology CAD (electronics); 2D Synopsys Sentaurus TCAD simulation; 4H-SiC MESFET; breakdown voltage; performance comparison; Breakdown voltage; Doping; Electric fields; Logic gates; MESFETs; Silicon carbide; Threshold voltage; 4H-SiC MESFET; Breakdown voltage; Buried-gate; Channel-recessed MESFET; Non-recessed MESFET;
Conference_Titel :
Emerging Research Areas and 2013 International Conference on Microelectronics, Communications and Renewable Energy (AICERA/ICMiCR), 2013 Annual International Conference on
Conference_Location :
Kanjirapally
Print_ISBN :
978-1-4673-5150-8
DOI :
10.1109/AICERA-ICMiCR.2013.6575965
