DocumentCode :
628871
Title :
CMOS-MEMS technology with front-end surface etching of sacrificial SiO2 dedicated for acoustic devices
Author :
Esteves, Jorge ; Rufer, Libor ; Basrour, Skandar ; Ekeom, D.
Author_Institution :
TIMA Lab., UJF, Grenoble, France
fYear :
2013
fDate :
13-14 June 2013
Firstpage :
154
Lastpage :
159
Abstract :
In this work, we will present results showing a feasibility of a MEMS microphone, based on AMS 0.35 μm CMOS standard process, with only one step of a sacrificial SiO2 maskless etching on the substrate front-side. The microphone design, modeling and simulated performance will be studied. Fabrication of test structures obtained with a SiO2 etching will be shown as well as characterizations of these test structures.
Keywords :
CMOS integrated circuits; etching; microfabrication; micromechanical devices; microphones; silicon compounds; AMS CMOS standard process; CMOS-MEMS technology; MEMS microphone design; SiO2; acoustic devices; front-end surface etching; maskless etching; size 0.35 mum; substrate front-side; Acoustics; Damping; Etching; Force; Metals; Micromechanical devices; Microphones; Acoustic MEMS; CMOS-MEMS Technology; Front-end Surface Etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Sensors and Interfaces (IWASI), 2013 5th IEEE International Workshop on
Conference_Location :
Bari
Print_ISBN :
978-1-4799-0039-8
Type :
conf
DOI :
10.1109/IWASI.2013.6576073
Filename :
6576073
Link To Document :
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