DocumentCode
629122
Title
Application of low-noise TIA ICs for novel sensing of MOSFET noise up to the GHz region
Author
Ohmori, Kenji ; Hasunuma, Ryu ; Yamamoto, Seiichi ; Tamura, Yoshinobu ; Hao Jiang ; Ishihara, Noboru ; Masu, Kazuya ; Yamada, Koji
Author_Institution
Univ. of Tsukuba, Tsukuba, Japan
fYear
2013
fDate
11-13 June 2013
Abstract
We have realized the characterization of MOSFET noise up to 3 GHz by locating a low-noise (LN) transimpedance amplifier (TIA) close to the devices to be tested (DUTs). A noise floor as low as 3 pA/√Hz was achieved by using an external high-voltage input. Moreover, a high-frequency noise probe equipped with a TIA IC was fabricated, with which measurements in a frequency range up to 800 MHz were achieved for on-wafer MOSFETs with conventional test structures.
Keywords
MOSFET; operational amplifiers; semiconductor device noise; DUT; GHz region; MOSFET noise; high-frequency noise probe; low-noise TIA IC; low-noise transimpedance amplifier; novel sensing; on-wafer MOSFET; Floors; Frequency measurement; Integrated circuits; MOSFET; Noise; Noise measurement; Probes; MOSFET; TIA; noise; noise probe;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location
Kyoto
ISSN
0743-1562
Print_ISBN
978-1-4673-5226-0
Type
conf
Filename
6576621
Link To Document