2.6GHz ultra-wide voltage range energy efficient dual A9 in 28nm UTBB FD-SOI

Author

Jacquet, D. ; Cesana, G. ; Flatresse, Philippe ; Arnaud, F. ; Menut, Patrick ; Hasbani, Frederic ; Di Gilio, Thierry ; Lecocq, Claire ; Roy, Tonmoy ; Chhabra, Amit ; Grover, Claire ; Minez, Olivier ; Uginet, Jacky ; Durieu, Guy ; Nyer, Frederic ; Adobati,

Author_Institution

STMicroelectron., Grenoble, France

fYear

2013

fDate

11-13 June 2013

Abstract

This paper presents the implementation details and silicon results of a 2.6GHz dual-core ARM Cortex A9 manufactured in a 28nm Ultra-Thin Body and BOX FD-SOI technology. The implementation is based on a fully synthesizable standard design flow, and the design exploits the great flexibility provided by FD-SOI technology, notably a wide Dynamic Voltage and Frequency Scaling (DVFS) range, from 0.6V to 1.2V, and forward body bias (FBB) techniques up to 1.3V bias voltage, thus enabling an extremely energy efficient implementation.

Keywords

elemental semiconductors; energy conservation; high-k dielectric thin films; microprocessor chips; power aware computing; silicon; silicon-on-insulator; BOX FD-SOI technology; DVFS; FBB technique; Si; UTBB FD-SOI technology; bias voltage; dual-core ARM Cortex A9; dynamic voltage and frequency scaling; forward body bias; frequency 2.6 GHz; fully synthesizable standard design flow; size 28 nm; ultra-thin body; ultra-wide voltage range energy efficient dual A9; voltage 0.6 V to 1.2 V; Energy efficiency; Generators; Logic gates; Memory management; Multicore processing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576623