DocumentCode
629134
Title
Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications
Author
Nuo Xu ; Ho, Byron ; Peng Zheng ; Wood, B. ; Vinh Tran ; Chopra, Sonik ; Yihwan Kim ; Bich-Yen Nguyen ; Bonnin, O. ; Mazure, C. ; Kuppurao, Satheesh ; Chorng-Ping Chang ; Liu, T.-J King
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
fYear
2013
fDate
11-13 June 2013
Abstract
Segmented-channel Si and SiGe P-MOSFETs (SegFETs) are compared against control devices fabricated using the same process but starting with non-corrugated substrates, with respect to key analog/RF performance metrics. SegFETs are found to have significant benefits due to their enhanced electrostatic integrity, lower series resistance and greater mobility enhancement, and hence show promise for future System-on-Chip applications.
Keywords
MOSFET; P-MOSFET; SegFET; analog/RF applications; analog/RF performance metrics; electrostatic integrity; mobility enhancement; noncorrugated substrates; p-channel MOSFET; segmented channel; system on chip applications; Layout; Logic gates; MOSFET; MOSFET circuits; Silicon; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location
Kyoto
ISSN
0743-1562
Print_ISBN
978-1-4673-5226-0
Type
conf
Filename
6576633
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