DocumentCode :
629144
Title :
Self-rectifying bipolar TaOx/TiO2 RRAM with superior endurance over 1012 cycles for 3D high-density storage-class memory
Author :
Chung-Wei Hsu ; I-Ting Wang ; Chun-Li Lo ; Ming-Chung Chiang ; Wen-Yueh Jang ; Chen-Hsi Lin ; Tuo-Hung Hou
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
11-13 June 2013
Abstract :
To satisfy strict requirements of storage-class memory, a bipolar TaOx/TiO2 RRAM has been developed. Numerous highly desired features, including: (1) extremely high endurance over 1012 cycles, (2) forming free, (3) self compliance, (4) self rectification ratio up to 105 required for ultrahigh-density 3D vertical RRAM, (5) multiple-level-per-cell capability, (6) room-temperature process, and (7) fab-friendly materials, have been demonstrated simultaneously for the first time.
Keywords :
random-access storage; tantalum compounds; titanium compounds; 3D high-density storage-class memory; 3D vertical RRAM; TaOx-TiO2; fab-friendly material; multiple-level-per-cell capability; room-temperature process; self-rectifying bipolar RRAM; Circuit synthesis; Electrodes; Materials; Resistance; Switches; Very large scale integration; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Print_ISBN :
978-1-4673-5226-0
Type :
conf
Filename :
6576643
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=629144
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