Title :
Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon
Author :
Agrawal, Ankit ; Lin, James ; Zheng, Bao ; Sharma, Shantanu ; Chopra, Sonik ; Wang, Kangping ; Gelatos, A. ; Mohney, S. ; Datta, Soupayan
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2-x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2-x interlayer (TIns). Ti/TiO2-x/n+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10-9Ω-cm2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2-x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.
Keywords :
MIS structures; Schottky barriers; contact resistance; wide band gap semiconductors; MIS tunnel contact; SBH; Schottky barrier height; barrier height reduction; contact resistivity reduction; metal-insulator-Si tunnel contact; wide gap semiconductor; Annealing; Conductivity; Nickel; Resistance; Silicon; Tin;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
