Enhancement of hole mobility and cut-off characteristics of strained Ge nanowire pMOSFETs by using plasma oxidized GeOx inter-layer for gate stack

Author

Ikeda, Ken-ichi ; Kamimuta, Y. ; Moriyama, Y. ; Ono, M. ; Usuda, Koji ; Oda, Masaomi ; Irisawa, T. ; Furuse, Kazutaka ; Tezuka, Taro

Author_Institution

Collaborative Res. Team Green Nanoelectron. Center (GNC), Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

fYear

2013

fDate

11-13 June 2013

Abstract

We demonstrate a record-high hole mobility ( μ_eff = 1922 cm²/Vs) of a Ge nanowire MOSFET using Al₂O₃/GeO_x gate stacks having a metal (Schottky) source and drain structure employing doping-free processes. Inserting a plasma-oxide (GeO_x) inter-layer between the high-k dielectric and the strained Ge nanowire channel greatly improved not only the mobility but the cut-off characteristics. High intrinsic G_msat (1.21 mS/μm at V_d = -0.5V) and low off-current (2.7×10^-9A/μm at V_d = -0.5V) were achieved for the device with the gate length of 45nm thanks to the reduced interface state density.

Keywords

MOSFET; Schottky effect; aluminium compounds; germanium; germanium compounds; high-k dielectric thin films; hole mobility; nanowires; Al₂O₃-GeO_x; Ge; Schottky source; cut off characteristic; gate stack; high hole mobility; high-k dielectric; hole mobility enhancement; metal source; pMOSFET; plasma oxidized interlayer; reduced interface state density; size 45 nm; strained nanowire; voltage -0.5 V; High K dielectric materials; Logic gates; MOSFET; Nanoscale devices; Strain; Very large scale integration; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576673