Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates

Author

Kim, S.H. ; Yokoyama, Masafumi ; Nakane, Ryosho ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2013

fDate

11-13 June 2013

Abstract

We report the first demonstration of strained In_0.53Ga_0.47As-on-insulator (-OI) MOSFETs on Si substrates using the direct wafer bonding (DWB) technique. 1.7 % highly-strained In_0.53Ga_0.47As-OI structures were successfully fabricated on Si by DWB. Strained In_0.53Ga_0.47As-OI MOSFETs with Ni-InGaAs metal S/D have successfully operated, for the first time. MOSFETs with 1.7 % tensile strain exhibits 1.65 × effective mobility (μ_eff) enhancement against InGaAs MOSFET without strain with maintaining high I_on/I_off ratio of ~10⁵. It is revealed from Hall measurements that the μ_eff enhancement is attributed to the increase in mobile free electron concentration due to the lowering in the conduction band edge induced by tensile strain.

Keywords

III-V semiconductors; MOSFET; gallium arsenide; indium compounds; nickel; silicon; wafer bonding; DWB technique; Ni-InGaAs; Si; conduction band edge; direct wafer bonding technique; highly-strained structures; mobile free electron concentration; strained extremely-thin body-on-insulator MOSFET; tensile strain; Indium gallium arsenide; Indium phosphide; MOSFET; Silicon; Substrates; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576681