Title :
Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates
Author :
Kim, S.H. ; Yokoyama, Masafumi ; Nakane, Ryosho ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
Abstract :
We report the first demonstration of strained In0.53Ga0.47As-on-insulator (-OI) MOSFETs on Si substrates using the direct wafer bonding (DWB) technique. 1.7 % highly-strained In0.53Ga0.47As-OI structures were successfully fabricated on Si by DWB. Strained In0.53Ga0.47As-OI MOSFETs with Ni-InGaAs metal S/D have successfully operated, for the first time. MOSFETs with 1.7 % tensile strain exhibits 1.65 × effective mobility (μeff) enhancement against InGaAs MOSFET without strain with maintaining high Ion/Ioff ratio of ~105. It is revealed from Hall measurements that the μeff enhancement is attributed to the increase in mobile free electron concentration due to the lowering in the conduction band edge induced by tensile strain.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; nickel; silicon; wafer bonding; DWB technique; Ni-InGaAs; Si; conduction band edge; direct wafer bonding technique; highly-strained structures; mobile free electron concentration; strained extremely-thin body-on-insulator MOSFET; tensile strain; Indium gallium arsenide; Indium phosphide; MOSFET; Silicon; Substrates; Tensile strain;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
