DocumentCode :
629186
Title :
Bit Cost Scalable (BiCS) technology for future ultra high density storage memories
Author :
Nitayama, A. ; Aochi, H.
Author_Institution :
Center for Semicond. R&D, TOSHIBA Corp., Yokkaichi, Japan
fYear :
2013
fDate :
11-13 June 2013
Abstract :
We proposed Bit Cost Scalable (BiCS) technology in 2007 as a three-dimensional memory for the future ultra high density storage devices, which extremely reduce the bit costs by vertically stacking memory arrays with punch and plug process. We´ve applied it to just NAND flash, which is BiCS Flash memory, and established the mass production technology. Moreover, we can apply the BiCS technology to various memories. The critical scaling issues and the comparison among various 3D-Flash-type memories are to be discussed, as well.
Keywords :
NAND circuits; flash memories; 3D-flash-type memory; BiCS flash memory; BiCS technology; NAND flash; bit cost scalable technology; critical scaling issues; mass production technology; punch and plug process; three-dimensional memory; ultra high density storage devices; ultra high density storage memory; vertically stacking memory arrays; Arrays; Electrodes; Flash memories; Lithography; Logic gates; SONOS devices; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
ISSN :
0743-1562
Print_ISBN :
978-1-4673-5226-0
Type :
conf
Filename :
6576685
Link To Document :
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