Title :
3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond
Author :
Maeda, Shigenobu ; Ko, Y. ; Jeong, Joonsoo ; Fukutome, H. ; Kim, Marn-Go ; Kim, Sungho ; Choi, Jang-Young ; Shin, Donghoon ; Oh, Yisok ; Lim, Wilton ; Lee, Kahyun
Author_Institution :
Syst. LSI Div., Samsung Electron., Yongin, South Korea
Abstract :
3 dimensional (3D) scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond was discussed in terms of performance, uniformity and reliability. Horizontal sigma shape for the epitaxial strain technology is an attractive alternative for Fin FET and beyond. Its structural and electrical superiority was demonstrated.
Keywords :
MOSFET; semiconductor device reliability; 3 dimensional scaling extensibility; 3D scaling extensibility; Fin FET; electrical superiority; epitaxial source drain strain technology; epitaxial strain technology; horizontal sigma shape; reliability; structural superiority; Epitaxial growth; Field effect transistors; Reliability; Shape; Strain; Stress; Surface treatment;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5226-0
