DocumentCode
629195
Title
Modeling RRAM set/reset statistics resulting in guidelines for optimized operation
Author
Degraeve, Robin ; Fantini, Andrea ; Raghavan, N. ; Chen, Y.Y. ; Goux, L. ; Clima, S. ; Cosemans, S. ; Govoreanu, B. ; Wouters, D.J. ; Roussel, Philippe ; Kar, Gouri Sankar ; Groeseneken, Guido ; Jurczak, Malgorzata
Author_Institution
IMEC, Leuven, Belgium
fYear
2013
fDate
11-13 June 2013
Abstract
The statistical properties of RRAM operation under various conditions can be quantitatively predicted by means of a modified and extended hourglass model. The intrinsic stochastic nature is controlled by the bottom vs. top reservoir symmetry. Guidelines for filament engineering are presented.
Keywords
random-access storage; statistical analysis; stochastic processes; stochastic programming; RRAM set-reset statistics modeling; hourglass model; intrinsic stochastic nature; optimization; quantitative prediction; reservoir symmetry; Adaptation models; Hafnium compounds; Reservoirs; Resistance; Stochastic processes; Tin; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2013 Symposium on
Conference_Location
Kyoto
ISSN
0743-1562
Print_ISBN
978-1-4673-5226-0
Type
conf
Filename
6576694
Link To Document