A novel high performance WOx ReRAM based on thermally-induced SET operation

Author

Wei-Chih Chien ; Ming-Hsm Lee ; Feng-Ming Lee ; Wei-Chen Chen ; Dai-Ying Lee ; Lin, Yu.-Yu. ; Erh-Kun Lai ; Hsiang-Lan Lung ; Kuang-Yeu Hsieh ; Chih-Yuan Lu

Author_Institution

Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2013

fDate

11-13 June 2013

Abstract

SET operation of unipolar transition-metal-oxide ReRAM is intrinsically difficult because the E-field is in an unfavorable direction (in the direction for RESET rather than SET), thus unipolar operation causes strong device degradation from the high current needed for SET operation. This work introduces a novel thermally induced SET operation that removes the high current stressing. By using an external heater we have provided heating without driving large current through the ReRAM device. This greatly improves the device performance and allows a high-density 1D1R array.

Keywords

random-access storage; tungsten compounds; 1D1R array; E-field; RESET; ReRAM device; current stressing; device degradation; device performance; external heater; high performance WO_x ReRAM; thermally induced SET operation; thermally-induced SET operation; unfavorable direction; unipolar operation; unipolar transition-metal-oxide ReRAM; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576695