Charge injection Super-lattice Phase Change Memory for low power and high density storage device applications

Author

Takaura, N. ; Ohyanagi, T. ; Kitamura, Masayuki ; Tai, M. ; Kinoshita, Moto ; Akita, K. ; Morikawa, T. ; Kato, Shigeo ; Araidai, M. ; Kamiya, K. ; Yamamoto, Takayuki ; Shiraishi, Kotaro

Author_Institution

Low-power Electron. Assoc. & Project, Tsukuba, Japan

fYear

2013

fDate

11-13 June 2013

Abstract

A new charge injection Super-lattice Phase Change Memory was developed with optimized GeTe/Sb₂Te₃ deposition and state-of-the-art analytical techniques. First principle calculations showed the charge injection enhanced Ge atom movement for the first time. We achieved 0.46 V and 3.3 MA/cm² reset and MLC programming. The stability of Super-lattice after 1E6 cycles was verified by thermal analysis characteristic to Ge 4-fold to Ge 6-fold transition.

Keywords

antimony compounds; charge injection; circuit stability; germanium compounds; low-power electronics; phase change memories; superlattices; tellurium compounds; thermal analysis; 1E6 cycle; 4-fold transition; 6-fold transition; GeTe-Sb₂Te₃; MLC programming; charge injection super-lattice phase change memory; high density storage device application; low power storage device application; optimized deposition; stability; thermal analysis characteristic; voltage 0.46 V; Films; Phase change materials; Phase change memory; Programming; Resistance; Thermal stability; X-ray scattering; Charge injection; PCM; Super-lattice;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2013 Symposium on

Conference_Location

Kyoto

ISSN

0743-1562

Print_ISBN

978-1-4673-5226-0

Type

conf

Filename

6576699