2–12 GHz high gain CMOS low noise amplifier with common-gate and current-reuse techniques

Author

Selvan, P. Thiruvalar ; Raghavan, Srinath ; Sivaraman, R.

Author_Institution

Dept. of ECE, Dhanalakshmi Srinivasan Eng. Coll., Perambalur, India

fYear

2013

fDate

3-5 April 2013

Firstpage

60

Lastpage

62

Abstract

A low-noise amplifier (LNA) with high gain is presented. The LNA is the outer most part of a transceiver and it is responsible for providing enough gain to the signal with the least distortion possible. This system uses current-reuse technique to achieve high gain with minimal noise. The CMOS 0.18μm technology has been chosen for the design of the LNA at the transistor level. Agilent´s ADS tool has been used to simulate. The LNA achieves S11 maximum of -41.3 dB, average S21 of 12.9 ± 2.9 dB, and an average NF of 3.2 dB over the 2-12 GHz frequency band.

Keywords

CMOS integrated circuits; UHF amplifiers; low noise amplifiers; microwave amplifiers; Agilent´s ADS tool; CMOS; LNA; common-gate techniques; current-reuse techniques; frequency 2 GHz to 12 GHz; low noise amplifier; noise figure 3.2 dB; size 0.18 mum; transceiver; Signal processing; About CMOS Low noise amplifier (LNA); current reuse technique; high gain; ultra-wide band (UVVB) X-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Signal Processing (ICCSP), 2013 International Conference on

Conference_Location

Melmaruvathur

Print_ISBN

978-1-4673-4865-2

Type

conf

DOI

10.1109/iccsp.2013.6577015

Filename

6577015