Mechanisms of low-energy operation of XCT-SOI CMOS devices — Prospect of sub-20-nm regime

This paper describes the performance prospect of scaled cross-current tetrode (XCT) CMOS devices and demonstrates the outstanding low-energy aspects of XCT-SOI CMOS by analyzing device operations. The low-energy operation of scaled XCT CMOS circuits stems from the `source potential floating effect´, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand long device lifetimes without recharging the battery.