DocumentCode :
629984
Title :
A 0.6V resistance-locked loop embedded digital low dropout regulator in 40nm CMOS with 77% power supply rejection improvement
Author :
Chao-Chang Chiu ; Po-Hsien Huang ; Lin, Man ; Ke-Horng Chen ; Ying-Hsi Lin ; Tsung-Yen Tsai ; Chen-Chih Huang ; Chao-Cheng Lee
Author_Institution :
Inst. of Electr. Control Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
12-14 June 2013
Abstract :
Conventional analog low dropout regulators suffer from serious degradations in its bandwidth, PSR, and regulation performance under sub-1V operation. The proposed digital LDO with the embedded resistance-locked loop (RLL) controller fabricated in 40nm CMOS process can still correctly regulate the output voltage to 0.4 V even when the input voltage scales down to 0.6V. Besides, maximum load current reaches 200mA and the switching noise suppression can be effectively improved by 77% compared to the state-of-the-art digital LDOs.
Keywords :
CMOS digital integrated circuits; embedded systems; integrated circuit noise; microcontrollers; CMOS process; analog low dropout regulators; current 200 mA; digital low dropout regulator; embedded resistance-locked loop controller; power supply rejection improvement; size 40 nm; switching noise suppression; voltage 0.4 V; voltage 0.6 V; voltage 1 V; Arrays; MOSFET; Noise; Regulators; Switches; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits (VLSIC), 2013 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4673-5531-5
Type :
conf
Filename :
6578649
Link To Document :
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