• DocumentCode
    630089
  • Title

    Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

  • Author

    Endo, Kazuhiro ; O´uchi, Shin-ichi ; Matsukawa, T. ; Yongxun Liu ; Sakamoto, Kazumitsu ; Mizubayashi, W. ; Migita, S. ; Morita, Yusuke ; Ota, Hiroyuki ; Suzuki, Einoshin ; Masahara, M.

  • Author_Institution
    Nat. Inst. of Adv. Ind. Sci. & Technol, Nanoelectron. Res. Inst., Tsukuba, Japan
  • fYear
    2013
  • fDate
    12-14 June 2013
  • Abstract
    This paper presents a high performance and highly reliable SRAM realized by collaboration between advanced FinFET device and circuit technology. As for the device technology, the amorphous metal gate FinFET with the record smallest AVt value (=1.34 mVμm) are demonstrated. As for the circuit technology, it is demonstrated that both reliability and performance of SRAM are dramatically enhanced by introducing the independent-double-gate (IDG) FinFET.
  • Keywords
    MOSFET; SRAM chips; integrated circuit reliability; IDG; SRAM performance enhancement; advanced FinFET device; amorphous metal gate; circuit technology collaboration; independent-double-gate FinFET; size 14 nm; FinFETs; Logic gates; Noise; Performance evaluation; SRAM cells; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2013 Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-5531-5
  • Type

    conf

  • Filename
    6578754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=630089