Impact of oxide trap passivation by fluorine on the low-frequency noise behavior of gate-last pMOSFETs

Author

Simoen, Eddy ; Veloso, A. ; Horiguchi, Naoto ; Paraschiv, V. ; Claeys, Cor

Author_Institution

Imec, Leuven, Belgium

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

5

Abstract

The low-frequency noise of gate-last pMOSFETs is studied, with particular attention to the passivation of oxide traps by fluorine. It is shown that the lowest flicker noise power spectral density is obtained after 6 min of exposure to an SF₆ plasma. At the same time, the dominant 1/f-noise mechanism changes from carrier number fluctuations to mobility fluctuations, indicating the de-activation of the gate oxide traps by the plasma treatment.

Keywords

1/f noise; MOSFET; flicker noise; fluctuations; fluorine; particle traps; passivation; plasma materials processing; semiconductor device noise; 1/f-noise mechanism; F; SF₆ plasma; carrier number fluctuations; flicker noise power spectral density; gate oxide traps; gate-last pMOSFET; low-frequency noise; mobility fluctuations; oxide trap passivation; plasma treatment; time 6 min; Fluctuations; Logic gates; Low-frequency noise; MOSFET; Metals; Plasmas; F passivation; gate-last pMOSFET; gate-oxide traps; high-k/metal gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578878

Filename

6578878