1/f Noise of accumulation mode p- and n-MOSFETs

The noise of inversion and accumulation mode MOSFETs has been compared and analysed in terms of doping concentration. For low doping concentration, both devices have similar noise levels. The increase of the doping concentration results in a degradation of the noise to the disadvantage of the accumulation mode n-MOSFETs while its level remains unchanged for the p-MOSFETs. A further increase leads to a drastic reduction of the noise in favour of both accumulation mode n- an p-MOSFETs on account of a change in the nature of the noise source.