A study on scaling behavior of responsivity and low frequency noise of Si MOSFET-based terahertz detectors

Author

Lisauskas, Alvydas ; Boppel, S. ; Krozer, V. ; Roskos, Hartmut G. ; Palenskis, Vilius ; Pralgauskaite, Sandra ; Matukas, Jonas ; Ragauskas, M.

Author_Institution

Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt, Germany

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

4

Abstract

We study scaling behaviour of terahertz responsivity and low-frequency noise of silicon MOSFET-based detectors. A set of 550-GHz resonant patch-antenna-coupled transistors with different channel widths varying from 320 nm to 1920 nm have been fabricated and investigated in temperature range from 77 K to 360 K. We find that the best sensitivities are achieved for narrowest devices without applied bias. When biased, all samples exhibit strong contributions random-telegraph switching noise. Characteristic time constants of the generation and recombination processes in investigated transistors vary from millisecond to microseconds.

Keywords

MOSFET; electron-hole recombination; microstrip antennas; random noise; semiconductor device noise; silicon; submillimetre wave detectors; submillimetre wave transistors; MOSFET based terahertz detector; Si; frequency 550 GHz; generation process; low frequency noise; random telegraph switching noise; recombination process; resonant patch antenna coupled transistor; scaling behavior; size 320 nm to 1920 nm; temperature 77 K to 360 K; terahertz responsivity; Detectors; Fluctuations; Logic gates; Noise; Silicon; Temperature dependence; Transistors; 1/f type noise; CMOS transistors; RTS noise; detection of terahertz radiation; photoresponsivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578898

Filename

6578898