• DocumentCode
    630185
  • Title

    Terahertz current noise in n+nn+ diodes

  • Author

    Mahi, Fatima Zohra ; Varani, Luca

  • Author_Institution
    Inst. of Technol., Univ. of Bechar, Bechar, Algeria
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present an analytical model for the calculation of the spectral density of current fluctuations in n+nn+ diodes at high frequency. The model takes into account the synchronous motion of the free carriers in each region of the structure, the so-called “returning” carriers and the plasma resonances at the n+n homojunctions. The current noise spectrum exhibits resonances in the terahertz domain which are discussed and analyzed for different total lengths of the diode and different materials.
  • Keywords
    current fluctuations; integrated circuit noise; semiconductor device models; semiconductor diodes; current fluctuations; free carriers; n+n homojunctions; n+nn+ diodes; plasma resonances; returning carriers; spectral density; synchronous motion; terahertz current noise; terahertz domain; Analytical models; Equations; Mathematical model; Noise; Plasmas; Resonant frequency; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6578930
  • Filename
    6578930
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=630185