Monte Carlo simulation of low-frequency excess noise in InP MOSFETs/HEMTs at impact ionization conditions

Author

Shiktorov, P. ; Gruzinskis, V. ; Starikov, E. ; Palermo, Carmine ; Torres, Juana ; Varani, Luca

Author_Institution

Center for Phys. Sci. & Technol., Semicond. Phys. Inst., Vilnius, Lithuania

fYear

2013

fDate

24-28 June 2013

Firstpage

1

Lastpage

3

Abstract

Theoretical investigation of the impact ionization and accompanying effects in InP submicron MOSFET/HEMT channels is performed by Monte Carlo Particle (MCP) simulation coupled with pseudo-2D Poisson equation. Main attention is paid to the low-frequency microwave noise. It is shown that there takes place a sharp growth of the excess low-frequency noise near the threshold of the development of the instability originated by the uncontrollable process of the impact ionization. It is found that the spectrum of the excess low-frequency noise in the pre-threshold region manifests the 1/f behavior in the frequency region 0.1 ÷ 1 GHz.

Keywords

III-V semiconductors; MOSFET; Monte Carlo methods; UHF field effect transistors; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; 1/f noise; HEMT; InP; MOSFET; Monte Carlo particle simulation; excess low frequency noise; frequency 0.1 GHz to 1 GHz; impact ionization condition; low frequency excess noise; low frequency microwave noise; low-frequency noise; prethreshold region; pseudo2D Poisson equation; Impact ionization; Indium phosphide; Logic gates; Low-frequency noise; Monte Carlo methods; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Noise and Fluctuations (ICNF), 2013 22nd International Conference on

Conference_Location

Montpellier

Print_ISBN

978-1-4799-0668-0

Type

conf

DOI

10.1109/ICNF.2013.6578932

Filename

6578932