• DocumentCode
    630189
  • Title

    Microplasmas avalanche breakdown as a diagnostic tool and reliability appreciating of the INGAN/GAN high-power LEDs

  • Author

    Vcleschuk, V.P. ; Vlasenko, A.I. ; Kisselvuk, M.P. ; Lyashenko, O.V.

  • Author_Institution
    V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Microplasmas breakdown of the InGaN/GaN heterostructures of different types of high-power light-emitting diodes is studied. It is shown that microplasma parameters, connected with reliability and such fabricating technology of the InGaN/GaN heterostructures as substrate material - Al2O3, SiC or Si, which determines the density of the critical extended defects, light flux, homogeneity of current spreading.
  • Keywords
    III-V semiconductors; avalanche breakdown; gallium compounds; indium compounds; light emitting diodes; semiconductor device reliability; wide band gap semiconductors; InGaN-GaN; diagnostic tool; high-power LEDs; high-power light-emitting diodes; microplasma avalanche breakdown; reliability; Electroluminescence; Fluctuations; Gallium nitride; Light emitting diodes; Noise; Substrates; InGaN/GaN heterostructure; microplasmas breakdown;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6578938
  • Filename
    6578938
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=630189