• DocumentCode
    630201
  • Title

    Hooge parameter of Ge grown for high-μ substrates of future sub-nm FETs

  • Author

    Ohya, Hayato ; Toyoshima, J. ; Tanuma, N. ; Tacano, M. ; Musha, Toshimitsu ; Itatani, T.

  • Author_Institution
    Meisei Univ., Tokyo, Japan
  • fYear
    2013
  • fDate
    24-28 June 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The Hooge constant of p-Ge is shown consistent with the new quantum mechanical model, αH = α /λ the energy partition among coupled harmonic oscillation model in the equilibrium, exactly inversely proportional to the mean free path normalized by the lattice constant.
  • Keywords
    MOSFET; carrier mean free path; elemental semiconductors; germanium; harmonic oscillators; lattice constants; quantum theory; Ge; Hooge constant; Hooge parameter; coupled harmonic oscillation model; energy partition; future subnm FET; high-μ substrates; lattice constant; mean free path; quantum mechanical model; Field effect transistors; Harmonic analysis; Indium gallium arsenide; Noise; Oscillators; Phonons; Silicon; Ge on Si; Hooge parameter; low frequency noise; sub-nm FET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Noise and Fluctuations (ICNF), 2013 22nd International Conference on
  • Conference_Location
    Montpellier
  • Print_ISBN
    978-1-4799-0668-0
  • Type

    conf

  • DOI
    10.1109/ICNF.2013.6578964
  • Filename
    6578964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=630201