Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application

Author

Li, Y.T. ; Long, S.B. ; Lv, H.B. ; Liu, Quanwei ; Wang, Michael ; Xie, H.W. ; Zhang, K.W. ; Yang, X.Y. ; Liu, Minggang

Author_Institution

Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2013

fDate

26-29 May 2013

Firstpage

184

Lastpage

187

Abstract

Different from conventional unipolar type 1D1R RRAM devices, in this paper, a bipolar type 1D1R RRAM device structure is firstly proposed and successfully demonstrated by the combined TiO_x-based Schottky diode and Cu/HfO₂/Pt bipolar RRAM cell. Reliable and uniform self-compliance resistive switching characteristics are obtained by imposing current compliance using the reverse bias current of the TiO_x-based Schottky diode. Experiment results show that the novel self-compliance bipolar 1D1R device has high potentiality for high-density integrated nonvolatile memory application.

Keywords

Schottky diodes; bipolar memory circuits; copper; hafnium compounds; platinum; random-access storage; titanium compounds; Cu-HfO₂-Pt; Schottky diode; TiO_x; bipolar 1D1R memory device; bipolar RRAM cell; high-density RRAM; high-density integrated nonvolatile memory; reverse bias current; self-compliance resistive switching; Current density; Electrodes; Hafnium compounds; Nickel; Schottky diodes; Switches; 1D1R; Bipolar resistive switching; RRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2013 5th IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6168-2

Type

conf

DOI

10.1109/IMW.2013.6582130

Filename

6582130