Design of Laterally Index-Coupled Grating III-V on Thin-SOI Distributed Feedback Lasers

Author

Ter-Hoe Loh ; Krishnamurthy, Vivek ; Qian Wang

Author_Institution

Data Storage Inst., Agency for Sci., Technol. & Res., Singapore, Singapore

Volume

27

Issue

15

fYear

2015

fDate

Aug.1, 1 2015

Firstpage

1624

Lastpage

1627

Abstract

We present performance analysis of laterally index-coupled grating-based λ/4-phase shifted heterogeneous III-V/Si distributed feedback laser diode. The laterally index-coupled grating has advantage of undistorted transverse mode profile with changes in layer and grating dimensions for targeting coupling coefficient. The coupling coefficient is inversely proportional to the central gap spacing of the grating. It ranges from sub-100 to 330 cm^-1 for III-V ridge-widths from 2 to 4 μm, etch-depths of 120 to 240 nm. The maximum possible optical output power ranges from 2 to 6 mW, based on device thermal impedances calculated by 2-D finite-element model.

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; finite element analysis; integrated optics; laser beams; laser modes; optical design techniques; semiconductor lasers; silicon-on-insulator; λ/4-phase shifted heterogeneous III-V/Si DFB laser diode; 2D finite-element model; Si; central gap spacing; coupling coefficient; depth 120 nm to 240 nm; etch-depths; laterally index-coupled grating design; optical output power; power 2 mW to 6 mW; thermal impedances; thin-SOI distributed feedback lasers; undistorted transverse mode profile; Couplings; Distributed feedback devices; Gratings; Laser feedback; Power generation; Silicon; Threshold current; Distributed-feedback lasers; heterogeneous integration; silicon photonics; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2432805

Filename

7106462