DocumentCode :
63185
Title :
Design of Laterally Index-Coupled Grating III-V on Thin-SOI Distributed Feedback Lasers
Author :
Ter-Hoe Loh ; Krishnamurthy, Vivek ; Qian Wang
Author_Institution :
Data Storage Inst., Agency for Sci., Technol. & Res., Singapore, Singapore
Volume :
27
Issue :
15
fYear :
2015
fDate :
Aug.1, 1 2015
Firstpage :
1624
Lastpage :
1627
Abstract :
We present performance analysis of laterally index-coupled grating-based λ/4-phase shifted heterogeneous III-V/Si distributed feedback laser diode. The laterally index-coupled grating has advantage of undistorted transverse mode profile with changes in layer and grating dimensions for targeting coupling coefficient. The coupling coefficient is inversely proportional to the central gap spacing of the grating. It ranges from sub-100 to 330 cm-1 for III-V ridge-widths from 2 to 4 μm, etch-depths of 120 to 240 nm. The maximum possible optical output power ranges from 2 to 6 mW, based on device thermal impedances calculated by 2-D finite-element model.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; finite element analysis; integrated optics; laser beams; laser modes; optical design techniques; semiconductor lasers; silicon-on-insulator; λ/4-phase shifted heterogeneous III-V/Si DFB laser diode; 2D finite-element model; Si; central gap spacing; coupling coefficient; depth 120 nm to 240 nm; etch-depths; laterally index-coupled grating design; optical output power; power 2 mW to 6 mW; thermal impedances; thin-SOI distributed feedback lasers; undistorted transverse mode profile; Couplings; Distributed feedback devices; Gratings; Laser feedback; Power generation; Silicon; Threshold current; Distributed-feedback lasers; heterogeneous integration; silicon photonics; silicon-on-insulator (SOI);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2015.2432805
Filename :
7106462
Link To Document :
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