Luminescence, Raman and synchrotron XPS study of amorphous Ge2S3 based films

Author

Mitsa, V. ; Ivanda, M. ; Gamulin, Ozren ; Holomb, R. ; Kondrat, O. ; Popovych, N. ; Lovas, G. ; Petreckiy, S. ; Tsud, N. ; Matolin, V. ; Prince, K.C.

Author_Institution

Inst. for Solid State Phys. & Chem., Uzhhorod Nat. Univ., Uzhhorod, Ukraine

fYear

2013

fDate

20-24 May 2013

Firstpage

28

Lastpage

33

Abstract

Ge₂S₃-based films have been investigated using Raman, photoluminescence and photoemission spectroscopy. For the sake of comparison some of the photoluminescent properties of bulk glasses have been used. The synchrotron photoelectron spectroscopy (SRPES) and XPS spectra of a-Ge₂S₃ films have been measured after the illumination and annealing. The changes in the parameters of the film´s core levels induced by near or above band gap light and thermal treatment are discussed in the paper. We consider the possibility that the PL radiation in Ge₂S₃-based films is a surface contaminant effect from native oxidized layer, which might have formed in the air.

Keywords

Raman spectra; X-ray photoelectron spectra; annealing; chalcogenide glasses; core levels; energy gap; germanium compounds; photoluminescence; semiconductor thin films; surface contamination; Ge₂S₃; Raman spectra; SRPES; amorphous films; annealing; band gap; core levels; illumination; light treatment; native oxidized layer; photoemission spectroscopy; photoluminescence; surface contaminant; synchrotron XPS; synchrotron photoelectron spectroscopy; thermal treatment; Annealing; Films; Glass; Laser excitation; Lighting; Optical filters; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Information & Communication Technology Electronics & Microelectronics (MIPRO), 2013 36th International Convention on

Conference_Location

Opatija

Print_ISBN

978-953-233-076-2

Type

conf

Filename

6596219