High-performance photonic integrated circuits based on Si-Ge-silica monolithic photonic platform

Author

Yamada, Koji ; Tsuchizawa, Tai ; Nishi, Hidetaka ; Kou, Rai ; Hiraki, Tatsurou ; Takeda, Kenji ; Fukuda, Hiroshi ; Ishikawa, Yozo ; Wada, Kazuyoshi ; Yamamoto, Takayuki

Author_Institution

Nanophotonics Center, Atsugi, Japan

fYear

2013

fDate

June 30 2013-July 4 2013

Firstpage

1

Lastpage

2

Abstract

For telecommunications applications of highly-integrated silicon-based photonic devices, we have developed a silicon-germanium-silica monolithic photonic integration platform, on which high-performance silica-based passive devices and compact, high-speed silicon-based dynamic/active devices can be monolithically integrated.

Keywords

Ge-Si alloys; integrated optics; silicon compounds; telecommunication networks; Si-Ge-silica monolithic photonic platform; SiGe-SiO₂; compact silicon-based dynamic-active devices; high-speed silicon-based dynamic-active devices; photonic integrated circuits; silica-based passive devices; silicon-based photonic devices; telecommunications applications; High-speed optical techniques; Optical attenuators; Optical crosstalk; Optical device fabrication; Optical waveguides; Photonics; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th

Conference_Location

Kyoto

Type

conf

Filename

6597359