Title :
Efficiency and fabrication tolerance of half-ridge InP/InGaAsP polarization converters
Author :
Zaitsu, Masaru ; Tanemura, Takuo ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol. (RCAST), Univ. of Tokyo, Tokyo, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Integrated InP/InGaAsP polarization converters based on half-ridge structure are studied numerically. We demonstrated that the fabrication tolerance can be extended significantly by optimizing the thickness of the residual InGaAsP layer at the ridge side.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; optical fabrication; InP-InGaAsP; fabrication tolerance; half-ridge structure; integrated polarization converters; residual layer; thickness optimisation; Etching; Indium phosphide; Optical device fabrication; Optical fiber communication; Optical waveguides; Photonics;
Conference_Titel :
OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching (OECC/PS), 2013 18th
Conference_Location :
Kyoto
