Title :
Optimization of TEM sample preparation methods by FIB for the increase of throughput
Author :
Shuqing Duan ; Ruijuan Qi ; Ming Li ; Yanli Zhao ; Liu Chen ; Yu Qinqin ; Guo, Anjin ; Chang, V. ; Wu, Junyong ; Chien, Kary
Author_Institution :
Semicond. Manuf. Int. Corp., Shanghai, China
Abstract :
This paper reports the optimized focused-ion-beam (FIB) sample preparation methods for transmission electron microscopy (TEM) analysis, which can prepare two samples at one time for 45nm and below technology nodes. The experimental results showed that these methods can help to reduce the cycle time, decrease the cost and improve the sample quality availably.
Keywords :
failure analysis; focused ion beam technology; integrated circuit reliability; integrated circuit testing; transmission electron microscopy; FIB; TEM sample preparation method; optimized focused ion beam sample preparation method; size 45 nm; throughput increased; transmission electron microscopy analysis; Failure analysis; Integrated circuits; MOS devices; Metals; Optimization; Performance evaluation; Random access memory; TEM; failure analysis; sample preparation;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599134
