DocumentCode
633844
Title
Optimization of TEM sample preparation methods by FIB for the increase of throughput
Author
Shuqing Duan ; Ruijuan Qi ; Ming Li ; Yanli Zhao ; Liu Chen ; Yu Qinqin ; Guo, Anjin ; Chang, V. ; Wu, Junyong ; Chien, Kary
Author_Institution
Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2013
fDate
15-19 July 2013
Firstpage
99
Lastpage
102
Abstract
This paper reports the optimized focused-ion-beam (FIB) sample preparation methods for transmission electron microscopy (TEM) analysis, which can prepare two samples at one time for 45nm and below technology nodes. The experimental results showed that these methods can help to reduce the cycle time, decrease the cost and improve the sample quality availably.
Keywords
failure analysis; focused ion beam technology; integrated circuit reliability; integrated circuit testing; transmission electron microscopy; FIB; TEM sample preparation method; optimized focused ion beam sample preparation method; size 45 nm; throughput increased; transmission electron microscopy analysis; Failure analysis; Integrated circuits; MOS devices; Metals; Optimization; Performance evaluation; Random access memory; TEM; failure analysis; sample preparation;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599134
Filename
6599134
Link To Document