CMOS magnetic sensor with MAGFET

Author

Rezaei, Nasrin ; Dehghani, Rasoul ; Jalili, Armin ; Mosahebfard, Ali

Author_Institution

Dept. of Electr. & Comput. Eng., Isfahan Univ. of Technol., Isfahan, Iran

fYear

2013

fDate

14-16 May 2013

Firstpage

1

Lastpage

5

Abstract

Split drain MAGFET is a special kind of MOSFET that can be used as a Hall sensor to measure magnetic fields. The sensitivity of a MAGFET depends on geometric parameters and bias conditions. In this paper several different structures of MAGFET including rectangular and sectoral shapes in two and four lobes, each with different sizing have been designed and fabricated in a standard CMOS 0.18/μm technology. The measurement results on different samples show that among all the shapes, the sectoral structure with two 90° lobes has the most sensitivity with respect to the magnetic field.

Keywords

CMOS integrated circuits; Hall effect transducers; MOSFET; integrated circuit measurement; magnetic field measurement; magnetic sensors; CMOS magnetic sensor; Hall sensor; MOSFET; geometric parameter; magnetic field measurement; rectangular shape; sectoral shape; size 0.18 mum; split drain MAGFET; standard CMOS technology; CMOS integrated circuits; MOSFET; Magnetic field measurement; Magnetic fields; Magnetic sensors; Metals; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2013 21st Iranian Conference on

Conference_Location

Mashhad

Type

conf

DOI

10.1109/IranianCEE.2013.6599582

Filename

6599582