DocumentCode
634076
Title
Effect of Stone-Wales defects on electronic properties of armchair graphene nanoribbons
Author
Samadi, Masoud ; Faez, Rahim
Author_Institution
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
fYear
2013
fDate
14-16 May 2013
Firstpage
1
Lastpage
4
Abstract
In this paper, the effects of Stone-Wales (SW) defect on transport properties of armchair graphene nanoribbons (AGNRs) are studied using tight binding calculations combined with nonequilibrium Green´s function (NEGF). We evaluate transmission and density of states (DOS) in two cases, pristine and defective AGNR, and we compare the results. Our results indicate that in the latter case, a larger bandgap is made due to symmetry breaking in GNR layer.
Keywords
Green´s function methods; crystal defects; electronic density of states; graphene; nanoribbons; tight-binding calculations; C; SW defect; Stone-Wales defects; armchair graphene nanoribbons; bandgap; density of states; nonequilibrium Green´s function; tight binding calculations; Carbon; Educational institutions; Field effect transistors; Graphene; Green´s function methods; Photonic band gap; Armchair graphene nanoribbon; Stone-Wales defect; nonequilibrium Green´s function; tight-binding method;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location
Mashhad
Type
conf
DOI
10.1109/IranianCEE.2013.6599605
Filename
6599605
Link To Document