Analysis and modeling of minority carrier injection in deep-trench based BCD technologies

Author

Kollmitzer, Michael ; Olbrich, Markus ; Barke, Erich

Author_Institution

Infineon Technol. Austria AG, Villach, Austria

fYear

2013

fDate

24-27 June 2013

Firstpage

245

Lastpage

248

Abstract

This paper proposes a methodology for circuit simulation of parasitic effects caused by minority carrier injection into the substrate of a deep-trench based BCD technology. An equivalent circuit is used containing pre-calculated macro models for the injecting diode, the substrate of the chip and the sensitive diode. The macro models are generated by means of TCAD simulations which determine the carrier density distribution in the substrate. The carrier density in the substrate at the sensitive pn-junction is directly related to the parasitic current of the device. The results of the simulations are verified by test chip measurements.

Keywords

CMOS integrated circuits; bipolar integrated circuits; carrier density; circuit simulation; equivalent circuits; minority carriers; semiconductor diodes; technology CAD (electronics); TCAD simulations; bipolar-CMOS-DMOS technology; carrier density distribution; circuit simulation; deep-trench based BCD technologies; equivalent circuit; injecting diode; minority carrier injection; parasitic current; parasitic effects; precalculated macromodels; sensitive diode; sensitive pn-junction; test chip measurements; Charge carrier density; Current measurement; Integrated circuit modeling; Semiconductor device measurement; Semiconductor process modeling; Solid modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on

Conference_Location

Villach

Print_ISBN

978-1-4673-4580-4

Type

conf

DOI

10.1109/PRIME.2013.6603160

Filename

6603160