Advances in Photonics-Electronics Convergence System Technologies for optical interconnects

Author

Arakawa, Yasuhiko ; Tanabe, Kazuki ; Nakamura, T. ; Urino, Yutaka

Author_Institution

Inst. of Photonics-Electron. Convergence Syst. Technol. (PECST), Japan

fYear

2012

fDate

11-14 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

We discuss high density optical interconnects integrating an arrayed laser diode, silicon optical modulators, and germanium photodetectors on a single silicon substrate. A 5-Gbps error free data transmission with a 3.5-Tbps/cm² transmission density was demonstrated. Moreover, recent advances in silicon-InAs/GaAs hybrid quantum dot lasers by using a direct wafer bonding technique is discussed. We achieved a threshold current density of 205 A/cm² which is the lowest record among any lasers on silicon substrates.

Keywords

current density; elemental semiconductors; gallium arsenide; germanium; indium compounds; integrated optoelectronics; optical interconnections; optical modulation; photodetectors; quantum dot lasers; semiconductor laser arrays; silicon; wafer bonding; Si; Si-Ge; Si-InAs-GaAs; bit rate 5 Gbit/s; direct wafer bonding; error free data transmission; germanium photodetectors; high density optical interconnects; hybrid quantum dot lasers; integrated arrayed laser diode; photonic-electronics convergence system technologies; silicon optical modulators; single silicon substrate; threshold current density; transmission density; Adaptive optics; Lasers; Optical imaging; Optical modulation; Optical signal processing; Silicon; hybrid laser; laser diode; optical interposer; optical modulator; photodetector; quantum dot laser; silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics in Switching (PS), 2012 International Conference on

Conference_Location

Ajaccio

Type

conf

Filename

6608347